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北京市海淀区知春路27号量子芯座

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邀请报告嘉宾Dr. Henry Radamsson
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邀请报告嘉宾Dr. Henry Radamsson

Royal Institute of Technology, Sweden
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Henry Radamson received his M. Sc. Degree in physics and Ph. D degree in semiconductor materials from Linköping university, Sweden, in 1989 and 1996, respectively. In 1997, he joined the Royal Institute of Technology, Stockholm, Sweden, and initiated silicon-germanium epitaxy activity, where he has been a professor since 2005, and has participated in many national and EU Frame 6 and 7 projects. His current research interests include silicon/silicon germanium devices and process technology for MOSFETs, HBTs, and thermal sensors. He is the author or co-author of 170 scientific papers published in international journals and conferences and the associate editor of Journal of materials Science: Materials in Electronics. He has given more than 20 invited talks in international conferences. He is the delegate member in European research community and co-founder of Nocilis Materials and Nocilis Sensors AB, Sweden. He was a visiting professor of naval research laboratory (NRL), Washington DC, USA.

Topic: SnGeSi-based photo detectors

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