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邀请报告嘉宾Dr. Mikhail R. Baklanov
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邀请报告嘉宾Dr. Mikhail R. Baklanov

North China University of Technology, China
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Mikhail R. Baklanov received his PhD degree of Candidate of Chemical Science in 1977. He joined the Institute of Semiconductor Physics (ISP) as an research scientist (1974-1980), an Senior scientist (1980-1990) and the the head of Laboratory (1990-1995). He joined IMEC, Belgium as a Visiting Professor in 1995 and is a Principal Scientist since 2003. He is also a Visiting Professor of Moscow Institute of Physics and Technology (MIPT) since 2015. He is a contributor of low-k/barrier parts of International Technology Roadmap for Semiconductors (ITRS) and a member of Board of Directors of Leuven Instruments since 2015.

More than 600 publications (including > 230 papers in peer reviewed journals), >30 granted patents and >60 invited presentations at International conferences, Editor and contributor of several books. Three patents related to ellipsometric porosimetry (EP). The EP system is presently under industrial production by Company “Semilab” and it is a standard system for evaluation of nanoporous low-k films developed for nanoelectronics. 4 patents related to damage free cryogenic etching that allowed to achieve the lowest integrated k-value in ultralow-k materials.

Topic: Challenges in the implementation of low-k dielectrics in advanced ULSI interconnects

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